utc BF422 npn epitaxial silicon transistor utc unisonic technologies co. ltd 1 qw-r201-063,a high voltage transistor features *collector-emitter voltage: v ceo= 250v. *complementary to bf423. applications * high voltage application. * monitor equipment application. to-92 1 1: emitter 2: collector 3: base absolute maximum ratings (ta=25 c) parameters symbol ratings unit collector-base voltage v cbo 250 v collector-emitter voltage v ceo 250 v emitter-base voltage v ebo 5 v collector current (dc) ic 50 ma collector current (peak) ic p 100 ma base current i b 50 ma collector power dissipation pc 625 mw junction temperature tj 150 c storage temperature t stg -65~+150 c electrical characteristics (ta=25 c, unless otherwise specified) parameters symbol conditions min. typ. max. unit v cb = 200v, i e =0 10 na collector cut-off current i cbo v cb= -200v , i e =0, tj=150 c 10 a emitter cut-off current i ebo v eb = 5v, ic=0 50 na dc current gain h fe v ce= 20v , ic=25ma 50 collector-emitter saturation voltage v ce (sat) ic= 30ma, i b = 5ma 0.6 v base-emitter voltage v be v ce =-20v,ic=25ma 0.75 v transition frequency f t v ce = 10v ,ic= 10ma 60 mhz reverse transfer capacitance cre v cb = 30v, i e =0, f=1mhz 1.6 pf
utc BF422 npn epitaxial silicon transistor utc unisonic technologies co. ltd 2 qw-r201-063,a . typical characteristics 12 16 08 4 40 10 30 20 0 ic-v ce (low voltage region) collector current, i c (ma) 20 24 28 60 50 collector-emitter voltage v ce (v) collector current, ic (ma) 3 0.3 1 100 10 50 0 hfe-ic 10 30 30 500 300 dc current gain, hfe 100 0.1 ib=0.05ma 0 0.15 0.2 0.4 0.6 1.2 0.3 1.6 common emitter ta=25 common emitter ta=25 10 5 v ce =20v 0.8 collector current, ic (ma) 3 0.3 1 100 10 50 0 10 30 30 500 300 dc current gain, hfe 100 ta=25 common emitter v ce =10v ta=100 collector current, ic (ma) 3 -0.3 1 0.5 0.05 0.3 0.01 v ce(sat) -ic 10 30 0.1 2 1 collector-emitter saturating voltage, vce(sat) 100 common emitter ta=25 ic/ib=10 ta=-25 hfe-ic 0.03 5 2 bqse-emitter voltage, vbe (v) 0.4 0.6 00.2 -10 -30 -20 0 ic-v be 0.8 1.0 50 40 1.2 collector current ,ic(ma) common emitter v ce =10v t a = 2 5 t a = 1 0 0 t a = - 2 5 collector current, ic (ma) 3 -0.3 1 0.5 0.05 0.3 0.01 v ce(sat) -ic 10 30 0.1 2 1 100 common emitter ta=25 ta=100 0.03 ta=25 ta=-25 collector-emitter saturating voltage, vce(sat) (v) 120 160 080 40 8 2 6 4 0 collector current, ic (ma) 200 240 280 10 collector-base voltage, vcb(v) collector output capacitance, cob(pf) reverse transfer capacitance, cre(pf) 3 0.3 1 100 50 10 ft-ic 10 30 30 500 300 transition frequency ,ft(mhz) cob i e =0 f=1mhz ta=25 common emitter ta=25 cre v ce =10v v ce =20v cob,cre-v cb
utc BF422 npn epitaxial silicon transistor utc unisonic technologies co. ltd 3 qw-r201-063,a 80 120 040 200 600 400 0 pc-ta 160 1000 800 200 collector power dissipation, pc (mw) ambient temperature, ta( ) 3 30 5 collector emitter voltage, v ce (v) safe operating area collector current, ic (ma) 100 3 10 1 10 300 0.5 30 50 100 200 ic max.(pulsed)* d c o p e r a ti o n 1 m s 10ms 1 0 0 m s *single nonrepetitive pulse ta=25 curves must be derated linearly with increase in temperature utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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